Seminar Jurusan 21 Februari 2013


Synthesis and Characterization of Pristine and Indium Doped ZnO Nanowires

Abrar Ismardi*, Dee Chang Fu and Burhanuddin Yeop Majlis
Institute of Microengineering and Nanoelectronics (IMEN)
Universiti Kebangsaan Malaysia
43600, Bangi, Selangor, Malaysia
*Contact author :

1-Dimensional (1-D) nanostructure of metal oxide semiconductor has become one of the most important structures that is highly potential to be used in a wide range of applications, such as electrical, optical, sensing devices etc. Zinc oxide (ZnO), as one of most intensively studied metal oxide semiconductor material, which has wide direct band gap of 3.37 eV at room temperature and large exciton binding energy of 60 meV, has also been used for several applications. 1-D nanostructure of ZnO like nanowires, nanobelts, nanoparticles, nanohelix and other kind of nanostructures have attracted great interest from researchers due to its peculiar and unique properties at the nanoscale size that have possibilities to be built the nanoblock for nanodevices. In this research, synthesized pristine and indium doped ZnO nanowires by conventional single and a modified double tube methods have been done. Characterization for their morphologies, crystallinity and crystal structure and many others properties using FESEM, HRTEM, XRD, XPS, PL and Raman scattering were carried out to investigate the fundamental behavior of those nanowires. A series of testing for pristine and indium doped ZnO nanowires have been carried out to measure the sensitivity of those nanowires to butane gas, acetone and under illumination of UV light in a vacuum chamber under room and elevated temperature (200o-300oC). The characterization for gas sensing and UV photodetector results have shown sensitivity of pristine ZnO nanowires and indium doped ZnO nanowires. ZnO nanowires and its doped series, shows good performance as a gas sensor when it is operated at higher temperature, since some of them has no reaction with the gas at room temperature. Resistance of the nanowires decreases as the chamber’s temperature increase. Besides that, it is found that the resistance of pristine and indium doped ZnO has been found to be decrease after illumination of UV light compare to in the dark room.

Abstract in pdf can be found here.